silicon transistor
英 [ˈsɪlɪkən trænˈzɪstə(r)]
美 [ˈsɪlɪkən trænˈzɪstər]
硅晶体管
双语例句
- A Study of the Structure and the Performance of Microwave Silicon Bipolar Transistor Using for MMIC and Its Process Development
用于MMIC硅基双极型高频微波晶体管结构、性能研究及工艺开发 - Kyanite-sillimanite type facies series silicon npn mesa transistor
蓝晶石-硅线石型相系 - In this paper, a channel thermal impedance model for amorphous silicon thin film transistor is derived from a system of coupled energy equation, heat flowing equation and boundary conditions.
基于能量方程、热流方程和边界条件，本文推导出非晶硅薄膜晶体管的沟道热阻模型； - Metal sealed UHF and low noise silicon transistor
金属壳超高频低噪音硅晶体管 - Characteristic research of new type silicon magneto transistor manufactured by MEMS techniques
采用MEMS制作新型硅磁敏三极管特性研究 - Study on Laser Etching emitter Region-groove Approach of Magnetic-Sensitive Silicon Transistor
激光刻蚀硅磁敏三极管发射区引线槽的研究 - Energy gap and minority-carrier recombination lifetime are important physical parameters in the emitter of silicon transistor. A structure of a sub-100 nm base width silicon transistor has been described in this paper.
禁带宽度和少子复合寿命是硅晶体管发射区中重要的物理参数。本文描述了一种实现亚100nm基区宽度的晶体管结构。 - The amorphous silicon thin film transistor ( a-Si: H TFT) structure for effectively suppressing backlight illumination effect is proposed in this paper.
提出一种能有效抑制背光照影响的非晶硅薄膜晶体管（a-Si：HTFT）结构。 - A structure of a sub-100 nm base width silicon transistor has been described in this paper.
本文描述了一种实现亚100nm基区宽度的晶体管结构。 - A new-type silicon magneto-electric negative-resistance oscillations device, S-type negative resistance oscillating silicon magnetic-sensitive transistor, is presented.
介绍了一种新型硅磁电负阻振荡器件&S型负阻振荡硅磁敏三极管。 - The experimental results of dual emitter ballasting using a complex emitter ballasting resistor which is provided by a diffused silicon resistor and a poly silicon resistor in silicon microwave power transistor are reported.
本文报道了采用多晶硅电阻和扩散电阻组合而成的复合镇流电阻对硅微波功率器件进行二次发射极镇流的实验结果。 - Watt C Band Silicon Bipolar Transistor with T-Shaped Electrode
C波段3瓦T形电极硅双极晶体管 - PLED ( polymer light emitting diode) and a-Si TFT ( amorphous Silicon thin film transistor) technology have made great progress in the past few years. Combination of two technologies is expected to be the mainstream of future flat televisions.
近年来，PLED（聚合物发光二极管）和a-SiTFT（非晶硅薄膜晶体管）技术取得了巨大进展，两者的结合有望成为未来平板电视的主流。 - Light Amplified Characteristic of the Darlington Silicon Photo transistor
达林顿硅光电晶体管的光放大特性 - X-Band Silicon Microwave Transistor for Oscillator THE SUPERCONDUCTING TRANSISTOR Crystal Oscillator
X波段硅微波振荡晶体管 - The fabrication of the silicon bipolar transistor with super low h_ ( fe) temperature coefficient
超低h（FE）温度系数晶体管研制 - In this paper, the research of low temperature physical model and low frequency noise model of silicon bipolar transistor has been conducted.
对双极晶体管的低温物理模型和低频噪声模型进行了研究，认为低温下硅双极晶体管电流增益下降的主要原因是低温下非理想基极电流的增加。 - In this paper a new amorphous silicon thin-film transistor ( a-Si TFT) pixel circuit for an active matrix organic light-emitting diode ( AMOLED) employing a voltage programming has been proposed which consists of five switching TFTs, one driving TFT, and one capacitor.
本文设计了一种新颖的电压模式非晶硅薄膜晶体管（a-SiTFT）AMOLED的像素驱动电路，该电路包含五个开关晶体管、一个驱动晶体管和一个存储电容。 - Applications of the dry etching to silicon microwave high power transistor are analyzed. It is proposed that with the increase in operation frequency of silicon microwave power transistor, the dry etching technology with excellent anisotropy is urgently needed.
本文对目前干法腐蚀在硅微波大功率晶体管中的应用进行了分析，指出随着硅微波功率晶体管工作频率的不断提高，对高性能各向异性的干法腐蚀技术要求也更加迫切。 - In this paper, the structure, properties of polycrystalline silicon thin film transistor were explained, and its application in the active matrix liquid display device was described.
简要介绍了多晶硅薄膜晶体管的结构、器件特性以及在有源矩阵液晶显示器中的应用。 - An Improved Steady-state Physical Model for the Drift Region of VDMOS Silicon Transistor
硅高压VDMOS漂移区静态物理模型的一种改进 - Simulation of Charge Storage in Silicon Switching Transistor
Si开关晶体管电荷存贮效应的模拟 - Meanwhile, basic factors about affecting new type silicon magneto transistor characteristic are also shown.
同时，给出影响新型硅磁敏三极管特性的基本因素。 - Analysis and Design of Silicon Bipolar Transistor's with Low Noise at Low Frequency under Low Temperatures
硅低温低频低噪声双极晶体管的分析与设计 - Quantitative Modeling of DC and Transient Characteristics at High Injection Level at 77K and 300K in Silicon Bipolar Transistor
低温高注入硅双极晶体管电流增益和特征频率的定量模拟 - This paper presents the experimental results of a silicon pulsed power transistor with self-aligned T-shaped electrode structure.
报道了一种自对准T形电极结构的硅脉冲功率晶体管实验结果。 - It reaches 131% T when the relative sensitivity coefficient of the collector current of silicon magnetic-sensitive transistor differential circuit is measured in experiment.
实验测试硅磁敏三极管差分电路的集电极电流相对磁灵敏度达到了131%/T。 - In the thesis, our research work focus on the performance of silicon nanowire transistor.
在这些研究工作中，硅纳米线晶体管尤其引人注目。